RETURN TO ISSUEPREVResearch ArticleNEXT

Analog Memristive Characteristics of Mesoporous Silica–Titania Nanocomposite Device Concurrent with Selection Diode Property

  • Hunsang Jung
    Hunsang Jung
    Department of Chemical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin 17058, Republic of Korea
    More by Hunsang Jung
  • Yo-Han Kim
    Yo-Han Kim
    Department of Chemical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin 17058, Republic of Korea
    More by Yo-Han Kim
  • Jaekwang Kim
    Jaekwang Kim
    School of Integrative Engineering, Chung-Ang University, 84, Heuk Seok-ro, Dongjak-gu 06974, Republic of Korea
    More by Jaekwang Kim
  • Tae-Sik Yoon
    Tae-Sik Yoon
    Department of Materials Science and Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin 17058, Republic of Korea
    More by Tae-Sik Yoon
  • Chi Jung Kang
    Chi Jung Kang
    Department of Physics, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin 17058, Republic of Korea
  • Songhun Yoon*
    Songhun Yoon
    School of Integrative Engineering, Chung-Ang University, 84, Heuk Seok-ro, Dongjak-gu 06974, Republic of Korea
    *E-mail: [email protected] (S.Y.).
    More by Songhun Yoon
  • , and 
  • Hyun Ho Lee*
    Hyun Ho Lee
    Department of Chemical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin 17058, Republic of Korea
    *E-mail: [email protected] (H.H.L.).
    More by Hyun Ho Lee
Cite this: ACS Appl. Mater. Interfaces 2019, 11, 40, 36807–36816
Publication Date (Web):September 13, 2019
https://doi.org/10.1021/acsami.9b09135
Copyright © 2019 American Chemical Society
Article Views
389
Altmetric
-
Citations
LEARN ABOUT THESE METRICS
Read OnlinePDF (3 MB)
Supporting Info (1)»

Abstract

A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica–titania (m-ST) nanocomposites is introduced in this study. The nanostructured m-ST layer in an Al/m-ST/Pt device was constructed by facile soft templating of evaporation-induced self-assembly (EISA) method to demonstrate nonlinear threshold RS behaviors accompanying with discrete synaptic characteristics along with adaptive motions. The EISA layer was composed of well-ordered mesopores (∼10 nm), where paths of electrical currents could be controllably guided and sequentially activated by repeated voltage sweeps. The combinational memristive behavior accompanying the shift of threshold voltage (Vth) could implicate concurrent performances of threshold RS and selection diode devices. In addition, synaptic functionalities of long-term potentiation and depression were characterized by variations of pulse timing width (7–100 ms). Physical and chemical features of the m-ST were analyzed with Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and optical microscopy to investigate the unique origin of dual operation modes of the device. The m-ST synaptic device could have potential for further development of a hybrid selection diode having both a low sneaky current loss and memristive characteristics accomplishing low level of cross-talk between RS devices.

Supporting Information

ARTICLE SECTIONS
Jump To

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.9b09135.

  • Optical microscopy image, Raman spectra, FT-IR spectra, XPS images, and EFM image of the m-ST layer (Figures S1–S3); replotted IV characteristics (Figure S4); IV characteristics of gold (Au) top electrode/m-ST/Pt bottom electrode devices (Figure S5); potentiation and depression by repeated pulses (Figure S6); and spike-timing-dependent plasticity (STDP) of the Al/m-ST/Pt device (Figure S7) (PDF)

Terms & Conditions

Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Cited By


This article is cited by 5 publications.

  1. Zongjie Shen, Chun Zhao, Tianshi Zhao, Wangying Xu, Yina Liu, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Ce Zhou Zhao. Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials 2021, 3 (3) , 1288-1300. https://doi.org/10.1021/acsaelm.0c01094
  2. Sophia C. King, Man Li, Tiphaine Galy, Yan Yan, Joon Sang Kang, Victoria M. Basile, Yolanda L. Li, Michal Marszewski, Laurent Pilon, Yongjie Hu, Sarah H. Tolbert. Examining the Role of Atomic Scale Heterogeneity on the Thermal Conductivity of Transparent, Thermally Insulating, Mesoporous Silica–Titania Thin Films. The Journal of Physical Chemistry C 2020, 124 (50) , 27442-27452. https://doi.org/10.1021/acs.jpcc.0c06697
  3. Priyanka Bamola, Bharti Singh, Aranya Bhoumik, Mohit Sharma, Charu Dwivedi, Mandeep Singh, Goutam K. Dalapati, Himani Sharma. Mixed-Phase TiO2 Nanotube–Nanorod Hybrid Arrays for Memory-Based Resistive Switching Devices. ACS Applied Nano Materials 2020, 3 (11) , 10591-10604. https://doi.org/10.1021/acsanm.0c01648
  4. Wonkyu Kang, Kyoungmin Woo, Hyon Na, Chi Kang, Tae-Sik Yoon, Kyung Kim, Hyun Lee. Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device. Nanomaterials 2021, 11 (2) , 441. https://doi.org/10.3390/nano11020441
  5. Ya Li, Paiwen Fang, Xihua Fan, Yanli Pei. NiO-based memristor with three resistive switching modes. Semiconductor Science and Technology 2020, 35 (5) , 055004. https://doi.org/10.1088/1361-6641/ab76b0