An Insight into the Role of Oxygen Vacancy in Hydrogenated TiO2 Nanocrystals in the Performance of Dye-Sensitized Solar Cells

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Department of Chemistry and Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150001, P. R. China
§ Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
*E-mail: [email protected]. Fax: +86-451-86418270.
Cite this: ACS Appl. Mater. Interfaces 2015, 7, 6, 3754–3763
Publication Date (Web):January 26, 2015
Copyright © 2015 American Chemical Society
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Hydrogenated titanium dioxide (H-TiO2) nanocrystals were successfully prepared via annealing TiO2 in H2/N2 mixed gas flow at elevated temperatures ranging from 300 to 600 °C. Electron paramagnetic resonance (EPR) spectra were used to determine the produced oxygen vacancy in H-TiO2. Variations in temperature were studied to investigate the concentration change of oxygen vacancy in H-TiO2. The H-TiO2 nanocrystals prepared at different temperatures were employed into photoanodes sensitized by N719 dye and found to have exceptional effect on the solar-to-electric energy conversion efficiency (η). Photoanodes with H-TiO2 nanocrystals hydrogenated at 300 °C show the highest short-circuit current density (Jsc) of 18.92 mA cm–2 and photoelectrical conversion efficiency of 7.76% under standard AM 1.5 global solar irradiation, indicating a 27 and 28% enhancement in Jsc and η, respectively, in comparison to those with TiO2. The enhancement is attributed to high donor density, narrow band gap and positive shift of flat band energy (Vfb) of H-TiO2 that promote the driving force for electron injection. Intensity-modulated photocurrent spectroscopy (IMPS) accompanied by intensity-modulated photovoltage spectroscopy (IMVS) and other analyses were applied to shed more light on the fundamental mechanisms inside the charge transfer and transport in these systems.

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SEM images of TiO2 samples and hydrogenated TiO2; Tauc plots of TiO2 and hydrogenated TiO2; XPS spectra and atom percentages of the O 1s and Ti 2p peaks determined by the XPS analysis; photoelectric properties of DSSC with different treatment; equivalent circuit used to represent interface in DSSCs consisting of FTO glass substrate/TiO2/dye/I3/I∥Pt/FTO glass substrate; parameters obtained by the equivalent circuit. This material is available free of charge via the Internet at

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