Research Article

Electrical and optical control of single spins integrated in scalable semiconductor devices

See allHide authors and affiliations

Science  06 Dec 2019:
Vol. 366, Issue 6470, pp. 1225-1230
DOI: 10.1126/science.aax9406
Christopher P. Anderson
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
2Department of Physics, University of Chicago, Chicago, IL 60637, USA.
Alexandre Bourassa
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
Kevin C. Miao
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
Gary Wolfowicz
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
Peter J. Mintun
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
Alexander L. Crook
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
2Department of Physics, University of Chicago, Chicago, IL 60637, USA.
Hiroshi Abe
3National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Jawad Ul Hassan
4Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
Nguyen T. Son
4Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
Takeshi Ohshima
3National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
David D. Awschalom
1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.
2Department of Physics, University of Chicago, Chicago, IL 60637, USA.
5Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA.

You are currently viewing the abstract.

View Full Text

Log in to view the full text

Log in through your institution

Log in through your institution

Divacancies in a diode

Solid-state defects hold great promise as the building blocks for quantum computers. Most research has focused on defects in diamond, which are difficult to integrate with existing semiconductor technologies. An alternative two-vacancy neutral defect in silicon carbide (SiC) has a long coherence time but suffers from broad optical linewidths and charge instability. Anderson et al. fabricated these defects in a diode made out of commercially available SiC. Reverse voltage created large electric fields within the diode, tuning the frequencies of the defect's transitions by hundreds of gigahertz. The electric fields also caused charge depletion, leading to a dramatic narrowing of the transitions. The technique should be readily generalizable to other quantum defects.

Science, this issue p. 1225

Abstract

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

View Full Text

Stay Connected to Science